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IXTN90N25L2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXTN) Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
35
50
65
S
C iss
23
nF
C oss
C rss
t d(on)
t r
t d(off)
t f
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
2140
360
50
175
40
160
pF
pF
ns
ns
ns
ns
Q g(on)
640
nC
(M4 screws (4x) supplied)
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
125
385
0.05
nC
nC
0.17 ° C/W
° C/W
Safe Operating Area Specification
Symbol
SOA
Test Conditions
V DS = 250V, I D = 1.4A, T C = 75°C, tp = 3s
Min.
350
Typ.
Max.
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 45A, V GS = 0V, Note 1
I F = 45A, -di/dt = 100A/ μ s
V R = 80V, V GS = 0V
266
23
3.0
90
360
1.5
A
A
V
ns
A
μ C
Note 1: Pulse Test, t ≤ 300 μ s; Duty Cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2
6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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